New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

Abstract

Anomalous transconductance with nonmono- tonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two… (More)

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Cite this paper

@article{Lin2018NewMM, title={New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs}, author={Yen-Kai Lin and Pragya Kushwaha and Juan Pablo Duarte and Huan-Lin Chang and Harshit Agarwal and Sourabh Khandelwal and Angada B. Sachid and Michael Harter and Josef Watts and Yogesh Singh Chauhan and Sayeef Salahuddin and Chenming Hu}, journal={IEEE Transactions on Electron Devices}, year={2018}, volume={65}, pages={463-469} }