New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC

@article{Chen2009NewLI,
  title={New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC},
  author={Wensuo Chen and Gang Xie and Bo Zhang and Zehong Li and Mei Ping Zhao and Zhaoji Li},
  journal={2009 International Conference on Communications, Circuits and Systems},
  year={2009},
  pages={628-630}
}
A new Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure on SOI substrate, called Controlled Anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed… CONTINUE READING

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