New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with R<sub>diff, on</sub> of 26 m&#x003A9;·cm<sup>2</sup> at 25&#x000B0;C

Abstract

A significant improvement in 4H-SiC p-IGBTs has been achieved. A differential on- resistance of &#x002DC;26 m&#x003A9;.cm<sub>2</sub> was demonstrated at a gate bias of -16 V at 25&#x000B0;C. A novel current suppressing layer (CSL) was adopted to eliminate the JFET effect and enhance conductivity modulation by suppressing the current conduction through the… (More)

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@article{Zhang2007NewIR, title={New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C}, author={Oingchun Zhang and Charlotte Jonas and R. Callanan and J. Sumakeris and M. K. Das and A. P K Agarwal and J. W. Palmour and Sei-hyung Ryu and Jun Wang and Alex Y Huang}, journal={Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's}, year={2007}, pages={281-284} }