New Approach Based on ANFIS Computation to Study the Threshold Voltage Behavior Including Trap Effects for Nanoscale DG MOSFETs

Abstract

— In recent years, the aggressive scaling of CMOS technology has reduced the associated geometry to very low dimensions. At the same time, this process is accompanied inevitably with an increased reliability concern expressed basically by the ageing degradation that is a well-recognized challenge for further MOSFET family scaling. In this work, an Adaptive… (More)

Topics

10 Figures and Tables

Cite this paper

@inproceedings{DjeffalNewAB, title={New Approach Based on ANFIS Computation to Study the Threshold Voltage Behavior Including Trap Effects for Nanoscale DG MOSFETs}, author={T. Bentrcia F. Djeffal and Mohammed Meguellati and Djemai Arar} }