New Analysis to Measure the Capacitance and Conductance of MOS Structure toward Small Size of VLSI Circuits

Abstract

In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four terminal R-Y-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to… (More)
DOI: 10.4236/cs.2011.23022

Topics

8 Figures and Tables

Slides referencing similar topics