Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method

  title={Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method},
  author={Seiya Abe and Yuuki Y Watanabe and Nozomi Shibano and Nobuyuki Sano and Hiroshi Furuta and Minoru Tsutsui and Toshinori Uemura and Takahiko Arakawa},
  journal={2012 IEEE International Reliability Physics Symposium (IRPS)},
We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25 nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS code system. The resulting scaling trend of SERs per bit is still decreasing similar to other predictions. From this analysis, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that terrestrial neutrons with energies up to several hundreds of… CONTINUE READING
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