Neuromorphic computing with hybrid memristive/CMOS synapses for real-time learning

Abstract

Resistive (or memristive) devices, including resistive switching memory (RRAM), phase change memory (PCM) an spin-transfer torque memory (STTRAM), are strong candidates for future high-density memory, embedded memory and storage class memory. The availability of resistive-device technology in the industry would pave the way for several other applications in… (More)
DOI: 10.1109/ISCAS.2016.7527508

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Cite this paper

@article{Ielmini2016NeuromorphicCW, title={Neuromorphic computing with hybrid memristive/CMOS synapses for real-time learning}, author={Daniele Ielmini and Stefano Ambrogio and V. Milo and Simone Balatti and Zhongqiang Wang}, journal={2016 IEEE International Symposium on Circuits and Systems (ISCAS)}, year={2016}, pages={1386-1389} }