Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

@article{Kelecs2013NetworksOS,
  title={Networks of silicon nanowires: a large-scale atomistic electronic structure analysis},
  author={Umit Kelecs and Bartosz Liedke and Karl-Heinz Heinig and Ceyhun Bulutay},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2013}
}
Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level, as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings… 

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References

SHOWING 1-10 OF 41 REFERENCES
Controlled Growth and Structures of Molecular-Scale Silicon Nanowires
Single-crystal silicon nanowires with diameters approaching molecular dimensions were synthesized using gold nanocluster-catalyzed 1D growth. High-resolution transmission electron microscopy studies
Colloquium: Structural, electronic, and transport properties of silicon nanowires
In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those
Quantum confinement and electronic properties of silicon nanowires.
We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The
Position-controlled interconnected InAs nanowire networks.
TLDR
The crystal structure of the interconnected nanotrees is investigated, demonstrating that branch growth after the contact with the second trunk has an epitaxial relationship to that trunk.
Electronic band structure of high‐index silicon nanowires
We calculated the electronic properties of high‐index free‐standing silicon nanowires. [11$ \bar 2 $] nanowires are indirect semiconductors for diameters down to 0.8 nm; [110] wires have a direct
From Si nanowires to porous silicon: the role of excitonic effects.
TLDR
It is shown that the electronic and optical properties of silicon nanowires, with different size and orientation, are dominated by important many-body effects, and an absorption spectrum which is in very good agreement with experimental measurements is found.
Accurate single-particle determination of the band gap in silicon nanowires
The electronic properties of hydrogen-terminated silicon nanowires (SiNWs) were calculated accurately by a well-chosen hybrid functional. We demonstrate that our approach allows us to efficiently
Diameter-dependent growth direction of epitaxial silicon nanowires.
TLDR
It is suggested that the interplay of the liquid-solid interfacial energy with the silicon surface energy expressed in terms of an edge tension is responsible for the change of the growth direction.
Electronic structure of semiconductor nanowires
We compute the subband structure of several group IV and III-V 001-, 110-, and 111-oriented nanowires using sp 3 and sp 3 d 5 s * tight-binding models. In particular, we provide the band gap energy
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