Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field

@inproceedings{kaaouachi2008NegativeMD,
  title={Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field},
  author={A. El kaaouachi and R. Abdia and Ah. Nafidi and Gerard Biskupski and J. Hemine},
  booktitle={NanoScience + Engineering},
  year={2008}
}
We present magnetoresistance measurements on metallic n-type InP sample with a carrier density n =1.2410 23 m -3 , far from the metal-insulator transition (MIT). The experiments were carried out at low temperature in the range 4.2-0.6 K and in magnetic fields up to 1 T. We have observed negative magnetoresistance (NMR) behaviour, and the experimental data are interpreted in terms of the weak localization and the effect of electron-electron interactions. Experimental data are compared with… CONTINUE READING

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