Negative differential resistance in GaN nanocrystals above room temperature

@article{Chitara2009NegativeDR,
  title={Negative differential resistance in GaN nanocrystals above room temperature},
  author={Basant Chitara and D.S. Ivan Jebakumar and C. N. R. Rao and Saluru Baba Krupanidhi},
  journal={Nanotechnology},
  year={2009},
  volume={20},
  pages={405205}
}
Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current–voltage characteristics have been used to investigate this effect through a metal–semiconductor–metal (M–S–M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ∼7 V above room temperature. 

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