Negative Thermal Expansion and Correlated Magnetic and Electrical Properties of Si‐Doped Mn3GaN Compounds

@inproceedings{Sun2010NegativeTE,
  title={Negative Thermal Expansion and Correlated Magnetic and Electrical Properties of Si‐Doped Mn3GaN Compounds},
  author={Ying Sun and Cong Jun Wang and Yongchun Wen and Lihua Chu and Man Yi Nie and Fusheng Liu},
  year={2010}
}
The negative thermal expansion (NTE) and correlated magnetic and electrical transport properties of Mn 3 Ga x Si 1―x N were investigated. For pure Mn 3 GaN, there is a large NTE effect corresponding to the antiferromagnetic to paramagnetic transition. Very interestingly, when partial Ga was replaced by Si, the NTE properties around the magnetic transition were changed. The NTE temperature range was broadened to ΔT = 148 K for Mn 3 Ga 0.75 Si 0.25 N and the linear thermal expansion coefficient… CONTINUE READING

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