Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

@article{Khan2016NegativeCI,
  title={Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor},
  author={Asif Islam Khan and Korok Chatterjee and Juan Pablo Duarte and Zhongyuan Lu and Angada B. Sachid and Sourabh Khandelwal and R. Ram{\'e}sh and Chenming Calvin Hu and Sayeef Salahuddin},
  journal={IEEE Electron Device Letters},
  year={2016},
  volume={37},
  pages={111-114}
}
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and… CONTINUE READING
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FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

  • Y. S. Chauhan, D. D. Lu, +5 authors C. Hu
  • 2015
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