Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Abstract

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length L<sub>g</sub> = 100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO<sub>3</sub>) ferroelectric capacitor to the gate terminal… (More)

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@article{Khan2016NegativeCI, title={Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor}, author={Asif Islam Khan and Korok Chatterjee and Juan Pablo Duarte and Zhong-Yuan Lu and Angada B. Sachid and Sourabh Khandelwal and Ramamoorthy Ramesh and Chenming Hu and Sayeef Salahuddin}, journal={IEEE Electron Device Letters}, year={2016}, volume={37}, pages={111-114} }