Corpus ID: 231741341

Nearly ideal memristive functionality based on viscous magnetization dynamics

@inproceedings{Ivanov2021NearlyIM,
  title={Nearly ideal memristive functionality based on viscous magnetization dynamics},
  author={Sergei Ivanov and Sergei Urazhdin},
  year={2021}
}
We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor a twoterminal circuit element whose resistance is approximately proportional to the integral of the input signal over time. The demonstrated device is based on a thin-film ferromagnet/antiferromagnet bilayer, where magnetic frustration results in viscous magnetization dynamics enabling memristive functionality, while the external magnetic field plays the role of the driving input. The demonstrated… Expand
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References

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