Near-theoretical fracture strengths in native and oxidized silicon nanowires.

Abstract

In this letter, fracture strengths σ f of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σ f in the Si was comparable to the theoretical strength of Si〈111〉, ≈22 GPa. In the oxidized SiNWs, σ f in the SiO2 was comparable to the theoretical strength of SiO2, ≈6 to 12 GPa. The results indicate a change in the failure mechanism between native SiNWs, in which fracture originated via inter-atomic bond breaking or atomic-scale defects in the Si, and oxidized SiNWs, in which fracture initiated from surface roughness or nano-scale defects in the SiO2.

DOI: 10.1088/0957-4484/27/31/31LT02

Cite this paper

@article{DelRio2016NeartheoreticalFS, title={Near-theoretical fracture strengths in native and oxidized silicon nanowires.}, author={Frank W DelRio and Ryan White and Sergiy Krylyuk and Albert Davydov and Lawrence H. Friedman and Robert F . Cook}, journal={Nanotechnology}, year={2016}, volume={27 31}, pages={31LT02} }