Near‐band‐gap photoluminescence from pseudomorphic Si1−xGex single layers on silicon

@inproceedings{Robbins1992NearbandgapPF,
  title={Near‐band‐gap photoluminescence from pseudomorphic Si1−xGex single layers on silicon},
  author={David James Robbins and Leigh Trevor Canham and Stephanie J. Barnett and Andrew D Pitt and P. D. J. Calcott},
  year={1992}
}
The systematic study of band‐edge luminescence in pseudomorphic Si/Si1−xGex/Si double‐heterostructure layers is reported for a wide composition range, 0.12<x<0.24, for the first time. An analytical expression for the exciton energy gap at 4.2 K valid for x<0.24 is derived from the no‐phonon line energies: ESX(x) = 1.155−0.874x+0.376x2 eV. Addition of an expression for the exciton binding energy provides an approximation for the energy difference between the alloy valence band and the lowest… CONTINUE READING

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