NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

@inproceedings{Greenlee2017NbNCL,
  title={NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices},
  author={Jordan Douglas Greenlee and Anindya Nath and Travis J. Anderson and Boris N. Feigelson and Andrew D. Koehler and Karl D. Hobart and Russell Dean Dupuis and Theeradetch Detchprohm and Song Chiang Shen and Fritz J. Kub},
  year={2017}
}

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