Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

Abstract

Positron annihilation is a non-destructive tool for investigating vacancy-type defects in materials. Detectable defects are monovacancies to vacancy clusters, and there is no restriction onsample temperature or conductivity. Using this technique, we studied native and plasma-treatment induced defects in GaN layers grown on Si substrates deposited by metal… (More)

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Cite this paper

@article{Uedono2014NativeAP, title={Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam}, author={A. Uedono and Tatsuya Fujishima and Yu Cao and Sameer Joglekar and Daniel Piedra and Hyung-Seok Lee and Yuhao Zhang and Yang Zhang and Nakaaki Yoshihara and Shoji Ishibashi and Masatomo Sumiya and Oleg A. Laboutin and Wayne G. Johnson and Tom{\'a}s Palacios}, journal={2014 International Workshop on Junction Technology (IWJT)}, year={2014}, pages={1-5} }