Narrowing of nanogap for purpose of molecular single-electronics

  title={Narrowing of nanogap for purpose of molecular single-electronics},
  author={I. V. Sapkov and Evgenii Sergeevich Soldatov},
  booktitle={Other Conferences},
Electrodes for molecular transistor with the gaps between them within 5 nm width’s range were created. On the first step suspended electrodes-blanks with 30 nm gaps was fabricated with a standard bilayer mask technology and electron beam lithography. Then wet etching in a 6% solution of hydrofluoricacid buffered with hydrofluoride of ammonium makes possible to suspend these electrodes to prevent them from short-circuit at the step of additional evaporation of metal film. The efficiency of… CONTINUE READING


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