Nanotopography Issues in Shallow Trench Isolation CMP

@inproceedings{Boning2002NanotopographyII,
  title={Nanotopography Issues in Shallow Trench Isolation CMP},
  author={Duane S. Boning and Brian Lee},
  year={2002}
}
As advancing technologies increase the demand for planarity in integrated circuits, nanotopography has emerged as an important concern in shallow trench isolation (STI) on wafers polished by means of chemical–mechanical planarization (CMP). Previous work has shown that nanotopography—small surface-height variations of 10–100 nm in amplitude extending across millimeter-scale lateral distances on virgin wafers—can result in CMP-induced localized thinning of surface films such as the oxides or… CONTINUE READING