Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

@article{Muller2012NanosecondPS,
  title={Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric \$\hbox\{HfO\}_\{2\}\$},
  author={Johannes Muller and T. S. Boscke and Uwe Schroder and R. Hoffmann and Thomas Mikolajick and Lothar Frey},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={185-187}
}
We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si:HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (MFIS) with poly-Si/TiN/Si:HfO2/SiO2/Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence… CONTINUE READING
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