Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations.

Abstract

We have developed an analytical method to determine the segregation levels on the same tilt boundaries (TBs) at the same nanoscopic location by a joint use of atom probe tomography and scanning transmission electron microscopy, and discussed the mechanism of oxygen segregation at TBs in silicon ingots in terms of bond distortions around the TBs. The three… (More)
DOI: 10.1111/jmi.12602

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Cite this paper

@article{Ohno2017NanoscopicAO, title={Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations.}, author={Y. Ohno and K. Inoue and K. Fujiwara and Kazuhiro Kutsukake and Momoko Deura and Ichiro Yonenaga and Naoki Ebisawa and Y. Shimizu and Y. Nagai and H. Yoshida and S. Takeda and S. Tanaka and Masako Kohyama}, journal={Journal of microscopy}, year={2017}, volume={268 3}, pages={230-238} }