Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

Tang, Fengzai, Lee, Kean B., Guiney, Ivor, Frentrup, Martin, Barnard, Jonathan S., Divitini, Giorgio, Zaidi, Zaffar H., Martin, Tomas L., Bagot, Paul A., Moody, Michael P., Humphreys, Colin J., Houston, Peter A., Oliver, Rachel A. and Wallis, David 2017. Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure… (More)