Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

@article{Iglesias2012NanoscaleOO,
  title={Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures},
  author={Violaine Iglesias and Mario Lanza and Albin Bayerl and Marc Porti and Montserrat Nafr{\'i}a and Xavier Aymerich and L. F. Liu and J. F. Kang and Gennadi Bersuker and Kecheng Zhang and Z. Y. Shen},
  journal={Microelectronics Reliability},
  year={2012},
  volume={52},
  pages={2110-2114}
}
Abstract Resistive Switching (RS) phenomenon in Metal–Insulator–Metal (MIM) structures with polycrystalline HfO 2 layers as dielectric has been studied at the nanoscale using Conductive Atomic Force Microscope (CAFM). The CAFM measurements reveal that (i) the conductive filaments (CFs) created at very small areas are the origin of the RS phenomenon observed at device level and (ii) RS conductive filaments are primarily formed at the grain boundaries, which exhibit especially low breakdown… CONTINUE READING

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