Nanoscale holographic interferometry for strain measurements in electronic devices

@article{Htch2008NanoscaleHI,
  title={Nanoscale holographic interferometry for strain measurements in electronic devices},
  author={Martin J. H{\"y}tch and Florent Houdellier and Florian H{\"u}e and Etienne Snoeck},
  journal={Nature},
  year={2008},
  volume={453},
  pages={1086-1089}
}
Strained silicon is now an integral feature of the latest generation of transistors and electronic devices because of the associated enhancement in carrier mobility. Strain is also expected to have an important role in future devices based on nanowires and in optoelectronic components. Different strategies have been used to engineer strain in devices, leading to complex strain distributions in two and three dimensions. Developing methods of strain measurement at the nanoscale has therefore been… CONTINUE READING