Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

@article{Enz2017NanoscaleMM,
  title={Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits},
  author={Christian C. Enz and Francesco Chicco and Alessandro Pezzotta},
  journal={IEEE Solid-State Circuits Magazine},
  year={2017},
  volume={9},
  pages={26-35}
}
This article presents the s implified charge-based Enz-Krummenacher-Vittoz (EKV) [11] metal-oxide-semiconductor field-effect transistor (MOSFET) model and shows that it can be used for advanced complementary metal-oxide-semiconductor (CMOS) processes despite its very few parameters. The concept of an inversion coefficient (IC) is first introduced as an essential design parameter that replaces the overdrive voltage V<sup>G</sup>-V<sup>T0</sup> and spans the entire range of operating points from… CONTINUE READING
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Charge-Based MOS Transistor Modeling—The EKV Model for Low-Power and RF IC Design

  • C. C. Enz, E. A. Vittoz
  • 2006
Highly Influential
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