Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

@article{Kapoor2011NanoscaleCO,
  title={Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices},
  author={Rakesh Kapoor and E. Escobedo-Cousin and S. H. Olsen and S. J. Bull},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={4016-4023}
}
Epitaxial growth of strained layers used for highspeed electronic devices can induce surface roughness, which impacts gate dielectric properties. To precisely understand the effect of roughness on the quality and reliability of dielectrics, high-spatial-resolution characterization techniques are required. In this paper, we use conductive atomic force… CONTINUE READING