Nanofilament Formation and Regeneration During Cu/Al₂O₃ Resistive Memory Switching.

@article{Hubbard2015NanofilamentFA,
  title={Nanofilament Formation and Regeneration During Cu/Al₂O₃ Resistive Memory Switching.},
  author={William A. Hubbard and Alexander Kerelsky and Grant Jasmin and Edward Robert White and Jared J. Lodico and Matthew Herman Mecklenburg and Brian Christopher Regan},
  journal={Nano letters},
  year={2015},
  volume={15 6},
  pages={
          3983-7
        }
}
Conductive bridge random access memory (CBRAM) is a leading candidate to supersede flash memory, but poor understanding of its switching process impedes widespread implementation. The underlying physics and basic, unresolved issues such as the connecting filament's growth direction can be revealed with direct imaging, but the nanoscale target region is completely encased and thus difficult to access with real-time, high-resolution probes. In Pt/Al2O3/Cu CBRAM devices with a realistic topology… CONTINUE READING
BETA
2
Twitter Mentions

Citations

Publications citing this paper.
SHOWING 1-9 OF 9 CITATIONS

Auto-Erasable RRAM Architecture Secured Against Physical and Firmware Attacks

  • IEEE Transactions on Circuits and Systems I: Regular Papers
  • 2018
VIEW 1 EXCERPT
CITES BACKGROUND

Similar Papers

Loading similar papers…