Nanoferroelectrics: statics and dynamics.

  title={Nanoferroelectrics: statics and dynamics.},
  author={J. F. Scott},
  journal={Journal of physics. Condensed matter : an Institute of Physics journal},
  volume={18 17},
A topical review is given of the physics of submicron ferroelectrics, describing the application considerations for memory devices (both as switching memory elements for ferroelectric nonvolatile random access memories, FRAMs, and as passive capacitors for volatile dynamic random access memories, DRAMs) as well as the fundamental physics questions regarding both the thickness and lateral size of present interest. 
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