Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

@inproceedings{Tsuchiya2006NanoelectromechanicalNM,
  title={Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots},
  author={Yoshishige Tsuchiya and Kosuke Takai and Nobuyuki Momo and Tasuku Nagami and Hiroshi Mizuta and Shunri Oda},
  year={2006}
}
A nanoelectromechanical device incorporating the nanocrystalline silicon nc-Si dots is proposed for use as a high-speed and nonvolatile memory. The nc-Si dots are embedded as charge storage in a mechanically bistable floating gate. Position of the floating gate can therefore be switched between two stable states by applying gate bias. Superior on-off characteristics are demonstrated by using an equivalent circuit model which takes account of the variable capacitance due to the mechanical… CONTINUE READING
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