NONLINEAR MODELING OF TRAPPING AND THER- MAL EFFECTS ON GaAs AND GaN MESFET/HEMT DE- VICES

Abstract

A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from −70◦C to +70◦C) without the need of… (More)

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Cite this paper

@inproceedings{Chaibi2012NONLINEARMO, title={NONLINEAR MODELING OF TRAPPING AND THER- MAL EFFECTS ON GaAs AND GaN MESFET/HEMT DE- VICES}, author={M. Chaibi and T. Fern{\'a}ndez and Ahmed Mimouni and Joe Rodriguez-Tellez and Antonio Taz{\'o}n and Africa Mediavilla}, year={2012} }