NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films


In this paper, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance. 


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