NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces

@inproceedings{Majlinger2009NEXAFSAX,
  title={NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces},
  author={Zlatko Majlinger and Anton Bozani{\'c} and Mladen Petravi{\'c} and Kwanpyo Kim and BongSoo Kim and Y.-W. Yang},
  year={2009}
}
Abstract Interaction of low-energy nitrogen ions (0.3–2 keV N 2 + ) with GaAs (100) surfaces has been studied by X-ray photoemission spectroscopy (XPS) around N 1 s and Ga 3d core-levels and near-edge X-ray absorption fine structure (NEXAFS) around the N K-edge, using synchrotron radiation. At the lowest bombardment energy, nitrogen forms bonds with both Ga and As, while Ga-N bonds form preferentially at higher energies. Thermal annealing at temperatures above 350 °C promotes formation of GaN… CONTINUE READING

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