NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON

@article{Mitani2002NBTIMI,
  title={NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON},
  author={Y. Mitani and Masayuki Nagamine and Hideki Satake and A. Toriumi},
  journal={Digest. International Electron Devices Meeting,},
  year={2002},
  pages={509-512}
}
We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in… CONTINUE READING
Highly Cited
This paper has 81 citations. REVIEW CITATIONS
43 Citations
0 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 43 extracted citations

82 Citations

01020'05'08'11'14'17
Citations per Year
Semantic Scholar estimates that this publication has 82 citations based on the available data.

See our FAQ for additional information.

Similar Papers

Loading similar papers…