NBTI-aware sleep transistor design for reliable power-gating

  title={NBTI-aware sleep transistor design for reliable power-gating},
  author={Andrea Calimera and Enrico Macii and Massimo Poncino},
  booktitle={ACM Great Lakes Symposium on VLSI},
Negative Bias Temperature Instability (NBTI) has been regarded as most important source of reliability of CMOS devices, and specifically pMOS transistors. In this work we focus on the NBTI-induced degradation of sleep transistor cells More in details we present a practical SPICE-based analysis framework for evaluating delay degradation of power-gated circuits due to NBTI-induced current capability reducing of pMOS sleep transistor. We also describe three NBTI-tolerant pMOS sleep transistor… CONTINUE READING
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