NANO EXPRESS InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Abstract

The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (*950 nm) with a full… (More)

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@inproceedings{Li2010NANOEI, title={NANO EXPRESS InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications}, author={Zhenhua Li and Jiang Wu and Zhiming Wang and Dongsheng Fan and Aqiang Guo and Shibing Li and Omar Manasreh and Gregory J. Salamo}, year={2010} }