Mutual ballasting: A novel technique for improved inductive system level IEC ESD stress performance for automotive applications

@article{Salman2013MutualBA,
  title={Mutual ballasting: A novel technique for improved inductive system level IEC ESD stress performance for automotive applications},
  author={Akram A. Salman and Farzan Farbiz and Ann Concannon and Hal Edwards and Gianluca Boselli},
  journal={2013 35th Electrical Overstress/Electrostatic Discharge Symposium},
  year={2013},
  pages={1-7}
}
A new ESD failure mode under inductive IEC stress of automotive CAN pins is identified. Inductor saturation causes increase of the rise-time from ins to ~20ns, leading to non-uniform conduction in the bidirectional ESD circuit. A new mutual ballasting layout technique is introduced to recover the system level ESD performance. 

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Showing 1-6 of 6 references

SCR-LDMOS. A novel LDMOS device with ESD robustness

  • S. Pendharkar, R. Teggatz, J. Devore, J. Carpenter, T. Efland, Chin-Yu Tsai
  • Power Semiconductor Devices and ICs, 2000…
  • 2000
1 Excerpt

A novel LDMOS device with ESD robustness , " Power Semiconductor Devices and ICs , 2000

  • R. Mertens, H. Kunz, +11 authors Chin-Yu Tsai
  • Correlation between system level and TLP tests…

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