Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth

  title={Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth},
  author={Sangwoo Pae and Taichi Su and J B Denton and G. W. Neudeck},
  journal={IEEE Electron Device Letters},
This paper presents for the first time, multiple layers of silicon-on-insulator (MLSOI) device islands fabricated using selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) techniques. MLSOI has the potential for ultra dense device integration. SOI device islands as small as 150 nm/spl times/150 nm, with thickness down to 40 nm have been fabricated. SOI device islands (5 /spl mu/m/spl times/500 /spl mu/m) in the second layer have shown no stacking faults in the 1290 islands… CONTINUE READING
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