Multiphysics modeling of PCM devices for scaling investigation

Abstract

A multiphysics model for Phase Change Memory (PCM) is calibrated on a large set of experimental data. Critical material and interface properties such as electrical and thermal resistivities and their dependence on temperature are extracted from data or fitting electrical characteristics with numerical simulations. The model is shown to match with a unique… (More)

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Cite this paper

@article{Ferrari2010MultiphysicsMO, title={Multiphysics modeling of PCM devices for scaling investigation}, author={Giammarco Ferrari and A. Ghetti and Daniele Ielmini and A. Redaelli and A. Pirovano}, journal={2010 International Conference on Simulation of Semiconductor Processes and Devices}, year={2010}, pages={265-268} }