Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

Abstract

A multifunctional vertical silicon-on-insulator-based metal-oxide-semiconductor (VSoI-MOS) field-effect transistor with trench body structure was designed. It can act as a high-performance transistor (HPT) or a capacitorless one-transistor dynamic random access memory (1T-DRAM), depending on the drain/source location and its electrical and transient… (More)

14 Figures and Tables

Cite this paper

@article{Lin2014MultifunctionBO, title={Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM}, author={Jyi-Tsong Lin and Po-Hsieh Lin}, journal={IEEE Transactions on Electron Devices}, year={2014}, volume={61}, pages={3172-3178} }