Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics

Abstract

Multi-scale approach based on physical, circuit and system levels for radiation effects modeling is considered. The model of low dose rate sensitivity of subthreshold leakage current is presented. Parameters for SPICE simulation can be obtained. 

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Cite this paper

@article{Zebrev2008MultiscaleMO, title={Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics}, author={G. I. Zebrev and M. A. Gorbunov and P K Osipenko}, journal={2008 26th International Conference on Microelectronics}, year={2008}, pages={591-594} }