Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET

  title={Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET},
  author={D. Varghese and Yi Xuan and Y. Q. Wu and Tingting Shen and P. D. Ye and M. A. Alam},
  journal={2008 IEEE International Electron Devices Meeting},
Through a combination of measurement techniques, we study the interface properties of In<sub>0.65</sub>Ga<sub>0.35</sub>As transistor with ALD deposited Al<sub>2</sub>O<sub>3</sub> gate dielectric. We show that the interface trap density at In<sub>0.65</sub>Ga<sub>0.35</sub>As/Al<sub>2</sub>O<sub>3</sub> interface can be relatively high, but the transistor still exhibits inversion characteristics. A detailed profiling of the interface traps shows that majority of the interface traps are donor… CONTINUE READING
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