Multi-phase-driven split-word-line ferroelectric memory without plate line

  title={Multi-phase-driven split-word-line ferroelectric memory without plate line},
  author={H. B. Kang and D. M. Kim and K. Oh and J. S. Roh and J. Kim and J. Ahn and H. Lee and D. C. Kim and W. Jo and H. M. Lee and S. M. Cho and H. J. Nam and J. W. Lee and C. S. Kim},
  journal={1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278)},
A working methodology bypasses the conventional cell plate line (PL), mitigating its disadvantages. The methodology utilizes split word lines (SWLs), driven by multi-phased voltage signals. In this scheme there is no need for PL and additional elements, and fabrication is simple and compatible with downscaling of cell area. 

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A 256kb Nonvolatile Ferroelectric Memory at 3V and lOOns “JSSCC Digest ofTechnica1 Papers,p268-269,1994

Tatsumi Sumi

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