Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

@article{Lee2012MultilevelSO,
  title={Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory},
  author={Seung Ryul Lee and Young-Bae Kim and Man Chang and Kyung Min Kim and Chang Bum Lee and Ji Hyun Hur and Gyeong-Su Park and Dong-Soo Lee and Myoung-Jae Lee and Chang Jung Kim and U-In Chung and In-Kyeong Yoo and Kinam Kim},
  journal={2012 Symposium on VLSI Technology (VLSIT)},
  year={2012},
  pages={71-72}
}
A highly reliable RRAM with multi-level cell (MLC) characteristics were fabricated using a triple-layer structure (base layer/oxygen exchange layer/barrier layer) for the storage class memory applications. A reproducible multi-level switching behaviour was successfully observed, and simulated by the modulated Schottky barrier model. Morevoer, a new programming algorithm was developed for more reliable and uniform MLC operation. As a result, more than 107 cycles of switching endurance and 10… CONTINUE READING
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References

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Endurance performance in 2 bits/cell operation using CSPP

  • S. S. Shen et al, ISSCC
  • Nature Mater. 10,
  • 2011

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