Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

@article{Rantamaki2013MultiWattSD,
  title={Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding},
  author={Antti Rantamaki and Jari Lyytikainen and Juuso Heikkinen and Juha M. Kontio and Oleg G. Okhotnikov},
  journal={IEEE Photonics Technology Letters},
  year={2013},
  volume={25},
  pages={2233-2235}
}
We present wafer bonding techniques applied for the first time in integrating GaAs-based distributed Bragg reflectors (DBRs) with InP-based active regions in optically pumped semiconductor disk lasers. The bonding procedures are performed at a modest temperature of 200 °C and enable multi-watt output powers from 1.3 μm semiconductor disk lasers. These technologies are critical for vertical-cavity lasers emitting in the range 1.3-1.6 μm since monolithically grown lattice-matched InP structures… CONTINUE READING

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