Mott Memory and Neuromorphic Devices

@article{Zhou2015MottMA,
  title={Mott Memory and Neuromorphic Devices},
  author={Y. Zhou and S. Ramanathan},
  journal={Proceedings of the IEEE},
  year={2015},
  volume={103},
  pages={1289-1310}
}
  • Y. Zhou, S. Ramanathan
  • Published 2015
  • Computer Science, Materials Science
  • Proceedings of the IEEE
  • Orbital occupancy control in correlated oxides allows the realization of new electronic phases and collective state switching under external stimuli. The resultant structural and electronic phase transitions provide an elegant way to encode, store, and process information. In this review, we examine the utilization of Mott metal-to-insulator transitions, for memory and neuromorphic devices. We emphasize the overarching electron-phonon coupling and electron-electron interaction-driven transition… CONTINUE READING
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