Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

@article{Tedesco2010MorphologyCO,
  title={Morphology characterization of argon-mediated epitaxial graphene on C-face SiC},
  author={Joseph L. Tedesco and Glenn G. Jernigan and James C. Culbertson and Jennifer K. Hite and Yang Yang and Kevin M. Daniels and Rachael L. Myers-Ward and Charles R. Eddy and Jr. and Joshua A. Robinson and Kathleen A. Trumbull and Maxwell T Wetherington and Paul M. Campbell and D. Kurt Gaskill},
  journal={Applied Physics Letters},
  year={2010},
  volume={96},
  pages={222103}
}
Epitaxial graphene layers were grown on the C-face of 4H–SiC and 6H–SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth… Expand
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