# Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential

@article{Hinckley1994MonteCS, title={Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential}, author={J. M. Hinckley and Jasprit Singh}, journal={Journal of Applied Physics}, year={1994}, volume={76}, pages={4192-4200} }

Monte Carlo methods which have been widely used for studying high field electron and hole transport, so far have not been applied to the complex problem of Ohmic hole transport. We present a versatile generalization of the Monte Carlo approach for Ohmic hole mobility studies and apply it to pure silicon and germanium. In particular, we examine the role of the optical phonon deformation potential d0 in controlling the temperature dependence of the mobility.

## 34 Citations

Carrier-phonon interaction in small cross-sectional silicon nanowires

- Physics
- 2008

Using first-order perturbation theory and deformation potential approximation, the interaction of electrons and holes with acoustic and optical phonons is investigated in silicon nanowires (SiNWs)…

Hole transport in strained Si

- Physics
- 1997

In this article Monte Carlo simulation of hole transport in uniaxially strained Si is reported. The results are obtained using an exact analytical diagonalization of a six band k⋅p model. Thus we…

Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering

- Physics
- 2011

A two-dimensional six-band k·p transport simulator has been developed within the nonequilibrium Green function formalism including hole-phonon interactions in the self-consistent Born approximation.…

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- Materials Science, Physics
- 2015

Analytic expressions for low field mobility and conductivity (resistance) in unstrained and high strained states for p-type silicon bulk crystals and nanostructures have been obtained on base of…

Hole scattering by confined optical phonons in silicon nanowires

- Physics
- 2007

The authors provide a theoretical analysis of the influence of confinement on the hole-optical phonon interaction in freestanding Si nanowires. Their model based on deformation potential optical…

The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1

- Physics
- 1995

Monte Carlo methods are used to model the electron and hole high‐field transport in both unstrained and compressively strained silicon and silicon‐germanium alloy. The data are analyzed to determine…

Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters

- Physics
- 2003

A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using the rate equation method with thermal balancing. The hole subband structure is calculated within…

Two‐band analysis of hole mobility and Hall factor for heavily carbon‐doped p‐type GaAs

- Physics, Materials Science
- 1996

We solve a pair of Boltzmann transport equations based on an interacting two‐isotropic‐band model in a general way first to get transport parameters corresponding to the relaxation time. We present a…

Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures

- Physics, Materials Science
- 2004

Analysis of hole transport in cascaded p-Si∕SiGe quantum well structures is performed using self-consistent rate equations simulations. The hole subband structure is calculated using the 6×6k·p…

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