Monte Carlo simulation of topographic contrast in scanning ion microscope.

@article{Ohya2004MonteCS,
  title={Monte Carlo simulation of topographic contrast in scanning ion microscope.},
  author={Kaoru Ohya and Tohru Ishitani},
  journal={Journal of electron microscopy},
  year={2004},
  volume={53 3},
  pages={229-35}
}
Topographic contrast of secondary-electron (SE) images in a scanning ion microscope (SIM) using a focused gallium (Ga) ion beam is investigated by Monte Carlo simulation. The SE yield of heavy materials, in particular, due to the impact of 30 keV Ga ions increases much faster than for the impact of electrons at < or =10 keV as a function of the angle of… CONTINUE READING