Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

In this paper a Monte Carlo investigation of Graded Channel (GC) Silicon-On-Insulator MOSFETs is presented. The influence of the length of the lightly-doped region of the channel (LLD) on the microscopic transport properties is exhaustively analyzed. Result show that increasing LLD provides an enhancement of the device performance in terms of drain current… CONTINUE READING